transistor(pnp) features z high voltage z high transition frequency z complementary to 2sc2881 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -120 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.8 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma,i e =0 -120 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -120 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -5 v collector cut-off current i cbo v cb =-120v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a dc current gain h fe v ce =-5v,i c =-100ma 80 240 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -1 v base-emitter voltage v be v ce =-5v,i c =-500ma -1 v transition frequency f t v ce =-5v,i c =-100ma 120 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 30 pf classification of h fe rank o y range 80-160 120-240 marking do dy sot-89 1. base 2. collector 3. emitter 1 2 3 2sa1 201 date:2011/05 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2sa1 201 2 date:2011/05 www.htsemi.com semiconductor jinyu
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